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06032U2R7BAT2A 参数 Datasheet PDF下载

06032U2R7BAT2A图片预览
型号: 06032U2R7BAT2A
PDF下载: 下载PDF文件 查看货源
内容描述: ¼W高线性度放大器 [¼W High Linearity Amplifier]
分类和应用: 放大器
文件页数/大小: 19 页 / 1189 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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TQP7M9102  
½W High Linearity Amplifier  
Specifications  
Absolute Maximum Ratings  
Recommended Operating Conditions  
Parameter  
Rating  
Parameter  
Vdd  
Min Typ Max Units  
Storage Temperature  
Device Voltage, Vdd  
Maximum Input Power, CW  
-65 to +150 oC  
+8 V  
+4.75  
+5  
+5.25  
V
Tcase  
-40  
85  
oC  
oC  
Tj (for>106 hours MTTF)  
160  
+27 dBm  
Operation of this device outside the parameter ranges given  
above may cause permanent damage.  
Electrical specifications are measured at specified test conditions.  
Specifications are not guaranteed over all recommended operating  
conditions.  
Electrical Specifications  
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 system, tuned application circuit  
Parameter  
Operational Frequency Range  
Conditions  
Min  
400  
Typical  
Max  
4000  
Units  
MHz  
MHz  
dB  
Test Frequency  
2140  
17.4  
12  
Gain  
15  
Input Return Loss  
Output Return Loss  
Output P1dB  
dB  
10  
dB  
+26.4  
+41  
+27.5  
+43.8  
+18.5  
3.9  
dBm  
dBm  
dBm  
dB  
Output IP3  
See Note 1.  
See Note 2.  
WCDMA Pout @ -50 dBc ACLR  
Noise Figure  
5
V
Vcc  
115  
137  
155  
50  
mA  
oC/W  
Quiescent Current, Icq  
Thermal Resistance (jnc to case) θjc  
Notes  
1. OIP3 measured with two tones at an output power of +9 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is  
used to calculate the OIP3 using 2:1 rule.  
2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.  
Data Sheet: Rev D 10/04/11  
Disclaimer: Subject to change without notice  
Connecting the Digital World to the Global Network®  
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© 2011 TriQuint Semiconductor, Inc.