TQP7M9102
Applications
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
½W High Linearity Amplifier
3-pin SOT-89 Package
Product Features
400-4000 MHz
+27.5 dBm P1dB
+44 dBm Output IP3
17.8 dB Gain @ 2140 MHz
+5V Single Supply, 135 mA Current
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The TQP7M9102 is a high linearity driver amplifier in a
low-cost, RoHS compliant, surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +44 dBm OIP3 and +27.5
dBm P1dB while only consuming 135 mA quiescent
current. All devices are 100% RF and DC tested.
The TQP7M9102 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system. On-chip ESD
protection allows the amplifier to have a very robust Class
2 HBM ESD rating.
The TQP7M9102 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Pin Configuration
Pin #
1
3
2, 4
Symbol
RF Input
RF Output / Vcc
Ground
Ordering Information
Part No.
TQP7M9102
TQP7M9102-PCB900
TQP7M9102-PCB2140
Description
0.5 W High Linearity Amplifier
TQP7M9102 869-960MHz EVB
TQP7M9102 2.11-2.17GHz EVB
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev D 10/04/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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