Tri path Technol og y, I nc. - Techni cal I nformati on
Electrical Characteristics
(Notes 8 and 9)
T
A
= 25
°C.
Unless otherwise noted, the supply voltage is VPP=|VNN|=90V, the input frequency is
1kHz and the measurement bandwidth is 20kHz. See Application/Test Circuit.
SYMBOL
P
OUT
PARAMETER
Output Power
(Continuous Output/Channel)
CONDITIONS
VPP=|VNN|=90V, R
L
= 4Ω
THD+N=10%
THD+N=1%
THD+N=0.1%
VPP=|VNN|=90V, R
L
= 8Ω
THD+N=10%
THD+N=1%
THD+N=0.1%
VPP=|VNN|=75V, R
L
= 4Ω
THD+N=10%
THD+N=1%
THD+N=0.1%
VPP=|VNN|=75V, R
L
= 8Ω
THD+N=10%
THD+N=1%
THD+N=0.1%
f = 1kHz, R
L
= 8Ω,
P
OUT
= 50W/Channel
f = 1kHz, R
L
= 4Ω,
P
OUT
= 50W/Channel
19kHz, 20kHz, 1:1, R
L
= 8Ω
P
OUT
= TBDW/Channel
A-Weighted, R
L
= 4Ω,
P
OUT
= 500W/Channel
0dBr = 10W, R
L
= 4Ω, f = 1kHz
P
OUT
= 300W/Channel, R
L
= 8Ω
P
OUT
= 500W/Channel, R
L
= 4Ω
P
OUT
= 10W/Channel, R
L
= 8Ω, Rin
= 49.9kΩ, See Application / Test
Circuit
P
OUT
= 10W/Channel, R
L
= 8Ω
A-Weighted, input shorted, DC
offset nulled to zero
MIN.
TYP.
1100
800
650
550
425
350
800
600
500
425
325
275
0.015
0.02
0.02
103
87
88
79
14.6
MAX.
UNITS
W
W
W
W
W
W
W
W
W
W
W
W
%
%
%
dB
dB
%
%
V/V
THD + N
THD + N
IMD
SNR
CS
η
η
A
V
Total Harmonic Distortion Plus
Noise
Total Harmonic Distortion Plus
Noise
Intermodulation Distortion
Signal-to-Noise Ratio
Channel Separation
Power Efficiency
Power Efficiency
Amplifier Gain
A
VERROR
e
NOUT
Channel to Channel Gain Error
Output Noise Voltage
-1
325
1
dB
µV
Note 8: Minimum and maximum limits are guaranteed but may not be 100% tested.
Note 9: Specific Components used:
Output MOSFETs (Q
O
): ST Microelectronics STW34NB20
Feedback Resistors (R
FB
): 18.7K
Ω
, 1%, 1W
Output Diodes (D
O
): International Rectifier MUR420
4
TDA2500 – KL/ Rev. 0.9/05.05
TRIPATH [ TRIPATH TECHNOLOGY INC. ]
