Tripath Technology, Inc. - Technical Information
Typical Performance at Vs = +45V
THD+N versus Output Power
10
5
20Hz - 22kHz BW
f = 1kHz
BBM = 25nS
Vs = +/-45V
Av = 14.8
ST STP19NB20 MOSFET
Efficiency versus Output Power
90
80
70
R
L
= 4Ω
2
1
Efficiency (%)
THD+N (%)
60
50
40
30
20
10
22Hz - 22kHz BW
f = 1kHz
BBM = 145nS
V
S
= +/-45V
Av = 20.75
ST STP19NB20 MOSFET
0.5
0.2
R
L
= 8Ω
0.1
0.05
R
L
= 4Ω
0.02
0.01
1
2
5
10
20
50
100
200
0
0
Output Power (W)
50
100
150
200
250
Output Power (W)
Intermodulation Performance
R
L
= 4Ω
10Hz - 80kHz BW
BBM = 25nS
V
S
= +/-45V
Av = 14.8
THD+N versus Frequency
R
L
= 4Ω
10 20Hz - 22kHz BW
5 BBM = 25nS
Pout = 30W/Channel
2 V = +/-45V
S
1 Av = 14.8
0.5 ST STP19NB20 MOSFET
+10
+0
19kHz, 20kHz, 1:1
-10
Pout = 30W/Channel
-20
0dBr = 11Vrms
THD+N (%)
0.2
0.1
0.05
0.02
0.01
FFT (dBr)
-30
ST STP19NB20 MOSFET
-40
-50
-60
-70
-80
-90
0.005
0.002
0.001
10
20
50
100
200
500
1k
2k
5k
10k
20k
-100
60
100
200
500
1k
2k
5k
10k
20k 30k
Frequency (Hz)
Frequency (Hz)
Channel Separation versus Frequency
+0
-10
R
L
= 4Ω
20Hz - 22kHz BW
BBM = 25nS
Pout = 30W/Channel
V
S
= +/-45V
Av = 14.8
ST STP19NB20 MOSFET
+0
-10
-20
-30
-40
A-Weighted Noise FFT
20Hz - 22kHz BW
BBM = 25nS
Pout = 0
V
S
= +/-45V
R
L
= 4Ω
Av = 14.8
ST STP19NB20 MOSFET
Channel Separation (dBr)
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
20
Noise (dBv)
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
50
100
200
500
1k
2k
5k
10k
20k
50
100
200
500
1k
2k
5k
10k
20k
Frequency (Hz)
Frequency (Hz)
6
TA0102A, Rev. 3.1/06.01
TRIPATH [ TRIPATH TECHNOLOGY INC. ]
