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FDP2572 参数 Datasheet PDF下载

FDP2572图片预览
型号: FDP2572
PDF下载: 下载PDF文件 查看货源
内容描述: 200W立体声CLASS -T数字音频放大器驱动器使用数字功率处理技术 [STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY]
分类和应用: 晶体驱动器音频放大器晶体管开关局域网
文件页数/大小: 34 页 / 664 K
品牌: TRIPATH [ TRIPATH TECHNOLOGY INC. ]
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Tripath Technology, Inc. - Technical Information  
DD  
Drain diode. This diode must be connected from the drain of the high side output  
MOSFET to the drain of the low side output MOSFET. This diode absorbs any high  
frequency overshoots caused by the output inductor LO during high output current  
conditions. In order for this diode to be effective it must be connected directly to the  
drains of both the top and bottom side output MOSFET. A fast or ultra fast recovery  
diode that can sustain the entire VPP-VNN voltage should be used here. In most  
applications a 150V or greater diode must be used.  
DS  
Source diode. This diode must be connected from the source of the high side  
output MOSFET to the source of the low side output MOSFET. This diode absorbs  
any high frequency undershoots caused by the output inductor LO during high output  
current conditions. In order for this diode to be effective it must be connected  
directly to the sources of both the top and bottom sides output MOSFETs. A fast or  
ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be  
used here. In most applications a 150V or greater diode must be used.  
Gate resistor for the output MOSFET for the switchmode power supply. Controls  
the rise time, fall time, and reduces ringing for the gate of the output MOSFET for  
the switchmode power supply.  
RPG  
QB  
Output MOSFET for the switchmode power supply to generate the VN10. This  
output MOSFET must be a P channel device.  
DSW  
Flywheel diode for the internal VN10 buck converter. This diode also prevents  
VN10SW from going more than one diode drop negative with respect to VNN. This  
diode should be a Shottky or ultrafast rectifier.  
LSW  
VN10 generator filter inductor. This inductor should be sized appropriately so that  
LSW does not saturate, and VN10 does not overshoot with respect to VNN during  
TK2150 turn on.  
CSW  
VN10 generator filter capacitors. The high frequency capacitor (0.1uF) must be  
located close to the VN10 pins (pin 41 and 43 of the TP2150) to maximize device  
performance. The bulk capacitor (100uF) should be sized appropriately such that  
the VN10 voltage does not overshoot with respect to VNN during TK2150 turn on.  
VN10 generator feedback resistor. This resistor sets the nominal VN10 voltage.  
With RSWFB equal to 1k, the VN10 voltage generated will typically be 10V above  
VNN.  
RSWFB  
CSWFB  
VN10 generator feedback capacitor. This capacitor, in conjunction with RSWFB, filters  
the VN10 feedback signal such that the loop is unconditionally stable.  
12  
TK2150 – Rev. 1.0/12.02