Tripath Technology, Inc. - Technical Information
A B S O L U T E M A X I M U M R A T I N G S (Note 1)
SYMBOL
VPP, VNN
V5
PARAMETER
Supply Voltage (VPP1, VPP2, VNN1, VNN2)
Value
+/- 40
6
UNITS
V
Positive 5V Bias Supply
V
V
V
C
C
C
Voltage at Input Pins (pins 18, 19, 23, 24, 26, 28-32)
Voltage for low-side FET drive
Storage Temperature Range
Operating Free-air Temperature Range (Note 2)
Junction Temperature
-0.3V to (V5+0.3V)
VNN+13
VN10
TSTORE
TA
TJ
ESDHB
-55º to 150º
-40º to 85º
150º
ESD Susceptibility – Human Body Model (Note 3)
All pins (except pin 27)
4000
1500
V
V
Pin 27
ESD Susceptibility – Machine Model (Note 4)
All pins
ESDMM
200
V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
See the table below for Operating Conditions.
Note 2: This is a target specification. Characterization is still needed to validate this temperature range.
Note 3: Human body model, 100pF discharged through a 1.5KΩ resistor.
Note 4: Machine model, 220pF – 240pF discharged through all pins.
O P E R A T I N G C O N D I T I O N S (Note 5)
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNITS
VPP, VNN Supply Voltage (VPP1, VPP2, VNN1, VNN2)
+/- 12 +/-31 +/- 36
V
V
V
V5
Positive 5 V Bias Supply
4.5
9
5
11
5.5
12
VN10
Voltage for FET drive (Volts above VNN)
Note 5: Recommended Operating Conditions indicate conditions for which the device is functional.
See Electrical Characteristics for guaranteed specific performance limits.
T H E R M A L C H A R A C T E R I S T I C S
SYMBOL
PARAMETER
Junction-to-case Thermal Resistance
Junction-to-ambient Thermal Resistance (still air)
VALUE UNITS
C/W
θ
θ
1.0°
20°
JC
C/W
JA
2
TA2022 – KLI/1.2/07-04
TRIPATH [ TRIPATH TECHNOLOGY INC. ]
