TC3957
REV2_20080516
1W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
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1W Typical Output Power at 6GHz
10dB Typical Linear Power Gain at 6GHz
High Linearity: IP3 = 40 dBm Typical at 6GHz
High Power Added Efficiency:
Nominal PAE of 35% at 6GHz
Breakdown Voltage: BV
DGO
≥
15V
Lg = 0.35
µm,
Wg = 2.4 mm
100 % DC Tested
Suitable for High Reliability Application
Lost Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3957 is a self-bias Cu-based ceramic packaged device with TC1501N PHEMT GaAs FETs, which is designed
to provide the single power supply application. The Cu-based ceramic package provides excellent thermal
conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source,
which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are
100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (T
A
=25[)
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
R
th
CONDITIONS
MIN
Output Power at 1dB Gain Compression Point,
f
= 6GHz V
DS
= 8 V
29
Linear Power Gain,
f
= 6GHz V
DS
= 8 V
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6GHz V
DS
= 8 V, *P
SCL
= 17 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 6GHz
Drain-Source Current at V
DS
= 8 V
Drain-Gate Breakdown Voltage at I
DGO
= 1.2mA
15
Thermal Resistance
TYP
30
10
40
35
300
18
16
MAX UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TRANSCOM [ TRANSCOM, INC. ]
