欢迎访问ic37.com |
会员登录 免费注册
发布采购

TC3943 参数 Datasheet PDF下载

TC3943图片预览
型号: TC3943
PDF下载: 下载PDF文件 查看货源
内容描述: 采用SMT封装0.5W单偏置和Prematched砷化镓功率PHEMTs [0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package]
分类和应用: 晶体射频场效应晶体管
文件页数/大小: 2 页 / 99 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC3943的Datasheet PDF文件第2页  
TC3943
REV2_20070503
0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package
FEATURES
Prematched for 5~10 GHz
0.5W Typical Output Power at 5~10GHz
7dB Typical Linear Power Gain at 10GHz
High Linearity: IP3 = 37 dBm Typical at 5~10GHz
High Power Added Efficiency: Nominal PAE of 30% at 5~10GHz
Breakdown Voltage: BV
DGO
15V
Wg = 1.2 mm
100 % DC Tested
Suitable for High Reliability Application
Lost Cost SMT Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3943 is a Single-bias and prematched GaAs PHEMT. It is designed for use in low cost, high volume,
and 5~10 GHz 0.5W amplifiers. It provides a typical gain of 7dB and P1dB of 27dBm at 10GHz. The single
positive drain bias is 8V and the typical drain-source current is 150mA. The device is packaged in copper
based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct soldering of
the device to the PCB.
ELECTRICAL SPECIFICATIONS (T
A
=25℃)
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
CONDITIONS
Output Power at 1dB Gain Compression Point,
f
= 10GHz V
DS
= 8V
Linear Power Gain,
f
= 10GHz V
DS
= 8V
Intercept Point of the 3
rd
-order Intermodulation,
f
= 10GHz V
DS
= 8V, *P
SCL
= 14 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 10GHz
Drain-Source Current at V
DS
= 8V
Drain-Gate Breakdown Voltage at I
DGO
= 0.6mA
15
MIN
26
6
TYP
27
7
37
30
150
18
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2