TC3921
REV1_20070503
Low-Cost Single-Bias Medium Power PHEMT GaAs FETs
FEATURES
!
22 dBm Typical Output Power at 6 GHz
!
High Linear Power Gain: G
L
= 12 dB Typical at 6 GHz
!
Lg = 0.25
µm,
Wg = 300
µm
!
100 % DC Tested
!
Low Cost Plastic SOT143R Package
DESCRIPTION
PHOTO ENLARGEMENT
The TC3921 is a single-bias medium power SOT143R packaged device with TC1201 PHEMT chip, which is
designed to provide the single power supply applications. The device is suitable for oscillator, medium power
amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
I
DS
R
th
Linear Power Gain,
f
Thermal Resistance
Conditions
Output Power at 1dB Gain Compression Point,
f
= 6 GHz, V
DS
= 5 V
Drain-Source Current at V
DS
= 5 V
= 6GHz, V
DS
= 5 V
MIN
21
10
TYP
22
12
40
125
MAX
UNIT
dBm
dB
mA
°C/W
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
V
DS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
21 dBm
300 mW
175
°C
- 65
°C
to +175
°C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than
300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TRANSCOM [ TRANSCOM, INC. ]
