TC3879
PRE1_20070518
Preliminary
7 W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
!
7W Typical Output Power
!
10.5dB Typical Linear Power Gain at 2.45 GHz
!
High Linearity: IP3 = 48.5 dBm Typical
!
High Power Added Efficiency: Nominal PAE of 35%
!
Breakdown Voltage: BV
DGO
≥
18V
!
100 % DC Tested
!
Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to
provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the
GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application.
All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
R
th
Linear Power Gain V
DS
= 10 V
Intercept Point of the 3
rd
-order Intermodulation V
DS
= 10 V, *P
SCL
= 27 dBm
Power Added Efficiency at 1dB Compression Power
Drain-Source Current at V
DS
= 10 V
Drain-Gate Breakdown Voltage at I
DGO
= 7.5mA
Thermal Resistance
18
CONDITIONS
Output Power at 1dB Gain Compression Point V
DS
= 10 V
MIN
TYP
38.5
10.5
48.5
35
1750
22
1.8
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
TRANSCOM [ TRANSCOM, INC. ]
