TC2997C
PRE3_20050418
Preliminary
2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 20 W Typical Power at 2.1 GHz
• 12 dB Typical Linear Power Gain at 2.1 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
DESCRIPTION
The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 2.1 GHz )
MIN
42
TYP
43
MAX
UNIT
dBm
dB
Symbol
P1dB
GL
CONDITIONS
Output Power at 1dB Gain Compression Point
Linear Power Gain
11
12
52
dBm
%
IP3
Intercept Point of the 3rd-order Intermodulation, *PSCL = 32 dBm
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
40
PAE
IDSS
gm
12.5
9000
-1.7
22
A
mS
Volts
Volts
°C/W
VP
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
20
BVDGO Drain-Gate Breakdown Voltage at IDGO =15 mA
Rth Thermal Resistance
* PSCL: Output Power of Single Carrier Level.
0.9
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
P 1 / 3
Fax: 886-6-5051602
TRANSCOM [ TRANSCOM, INC. ]
