欢迎访问ic37.com |
会员登录 免费注册
发布采购

TC2997D 参数 Datasheet PDF下载

TC2997D图片预览
型号: TC2997D
PDF下载: 下载PDF文件 查看货源
内容描述: 2.45GHz的20瓦法兰瓷封装的GaAs功率场效应管 [2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs]
分类和应用:
文件页数/大小: 3 页 / 101 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC2997D的Datasheet PDF文件第1页浏览型号TC2997D的Datasheet PDF文件第3页  
TC2997D  
REV3_20050418  
HANDLING PRECAUTIONS:  
ABSOLUTE MAXIMUM RATINGS at 25 °C  
Symbol  
VDS  
VGS  
IDS  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Rating  
The user must operate in a clean, dry environment.  
Electrostatic Discharge (ESD) precautions should be  
observed at all stages of storage, handling, assembly,  
and testing. The static discharge must be less than 300V.  
12 V  
-5 V  
IDSS  
Pin  
RF Input Power, CW  
Continuous Dissipation  
Channel Temperature  
Storage Temperature  
37 dBm  
100 W  
PT  
TCH  
TSTG  
175 °C  
- 65 °C to +175 °C  
FLANGE PACKAGE OUTLINE (in mm)  
Gate  
Source  
Source  
Drain  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
P 2 / 3  
Fax: 886-6-5051602