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TC2998F 参数 Datasheet PDF下载

TC2998F图片预览
型号: TC2998F
PDF下载: 下载PDF文件 查看货源
内容描述: 2.7-2.9GHz 20W封装的GaAs功率场效应管 [2.7-2.9GHz 20W Packaged GaAs Power FETs]
分类和应用:
文件页数/大小: 2 页 / 68 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC2998F的Datasheet PDF文件第1页  
TC2998F  
PRE.3_01/21/2008  
ABSOLUTE MAXIMUM RATINGS at 25 C  
HANDLING PRECAUTIONS:  
Symbol  
VDS  
VGS  
IDS  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Rating  
The user must operate in a clean, dry environment.  
Electrostatic Discharge (ESD) precautions should  
be observed at all stages of storage, handling,  
assembly, and testing. The static discharge must be  
less than 300V  
12 V  
-5 V  
IDSS  
Pin  
RF Input Power, CW  
Continuous Dissipation  
Channel Temperature  
Storage Temperature  
37dBm  
150 W  
PT  
TCH  
TSTG  
175 C  
- 65 C to +175 C  
MECHANICAL OUTLINE  
Gate  
Source  
Drain
Note – Mechanical outline might be adjusted upon actual design..  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
Fax: 886-6-5051602  
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