- Preliminary Datasheet -
TC2998E
PRE.1_01/21/2008
2.5-2.7GHz 20W Packaged GaAs Power FETs
FEATURES
20 W Typical Power
10.5 dB Typical Linear Power Gain
High Linearity:
IP3 = 52 dBm Typical
High Power Added Efficiency:
Nominal PAE of 37 %
100 % DC and RF Tested
DESCRIPTION
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier
for military or commercial applications.
ELECTRICAL SPECIFICATIONS
Symbol
FREQ
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
BV
DGO
R
th
CONDITIONS
Operating Frequency
Output Power at 1dB Gain Compression Point,
Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz
Linear Power Gain
Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz
Intercept Point of the 3
rd
-order Intermodulation, Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz,
*P
SCL
= 31 dBm
MIN
2.5
42
9.5
43
10.5
52
37
18.75
13500
-1.7
22
0.6
TYP
MAX
2.7
UNIT
GHz
dBm
dB
dBm
%
A
mS
Volts
Volts
C/W
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 60 mA
Drain-Gate Breakdown Voltage at I
DGO
=15 mA
Thermal Resistance
20
* P
SCL
: Output Power of Single Carrier Level, delta frequency=5MHz.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
TRANSCOM [ TRANSCOM, INC. ]
