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TC2997G 参数 Datasheet PDF下载

TC2997G图片预览
型号: TC2997G
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 GHz的16WFlange陶瓷封装的GaAs功率场效应管 [3.5 GHz 16WFlange Ceramic Packaged GaAs Power FETs]
分类和应用:
文件页数/大小: 3 页 / 140 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC2997G的Datasheet PDF文件第2页浏览型号TC2997G的Datasheet PDF文件第3页  
TC2997G
PRE2_20071107
Preliminary
3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
16 W Typical Power at 3.5 GHz
9 dB Typical Linear Power Gain at 3.5 GHz
High Linearity: IP3 = 52 dBm Typical
High Power Added Efficiency: Nominal PAE of 37 %
100 % DC and RF Tested
Flange Ceramic Package
Suitable for WiMax and WLL applications
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All
devices are 100% DC and RF tested to assure consistent quality. Typical applications include high
dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
BV
DGO
R
th
CONDITIONS
Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz
Linear Power Gain Vd = 10V, Id = 4A, f=3.4 – 3.6GHz
Intercept Point of the 3
rd
-order Intermodulation, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz, *P
SCL
= 32 dBm
MIN
41.5
8
TYP
42.5
9
52
37
18.75
13500
-1.7
20
22
0.6
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
C/W
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 60 mA
Drain-Gate Breakdown Voltage at I
DGO
=15 mA
Thermal Resistance
*P
SCL
: Output Power of Single Carrier Level, delta frequency=5MHz.
ABSOLUTE MAXIMUM RATINGS at 25
C
Symbol
V
DS
V
GS
I
DS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
I
DSS
37.5 dBm
150 W
175
C
- 65
C
to +175
C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should
be observed at all stages of storage, handling,
assembly, and testing. The static discharge must be
less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3