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TC2696P1620 参数 Datasheet PDF下载

TC2696P1620图片预览
型号: TC2696P1620
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor]
分类和应用:
文件页数/大小: 2 页 / 51 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC2696P1620的Datasheet PDF文件第1页  
TC2696  
REV4_20070507  
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)  
RECOMMANDED OPERATING CONDITION  
Symbol  
VDS  
VGS  
IDS  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Rating  
Symbol  
Parameter  
Drain to Source Voltage  
Drain Current  
Rating  
12 V  
VDS  
8 V  
-5 V  
ID  
500 mA  
IDSS  
HANDLING PRECAUTIONS:  
Pin  
RF Input Power, CW  
Continuous Dissipation  
Channel Temperature  
Storage Temperature  
30 dBm  
7.7 W  
The user must operate in a clean, dry environment.  
Electrostatic Discharge (ESD) precautions should be  
observed at all stages of storage, handling, assembly, and  
testing. The static discharge must be less than 300V.  
PT  
TCH  
TSTG  
175 °C  
- 65 °C to +175 °C  
TYPICAL SCATTERING PARAMETERS (TA=25 °C)  
VDS = 8 V, IDS = 500 mA  
FREQUENCY  
S11  
S21  
S12  
S22  
(GHz)  
MAG  
0.9232  
0.9179  
0.9098  
0.8978  
0.8806  
0.8574  
0.8295  
0.8045  
ANG  
175.28  
161.34  
148.40  
134.59  
118.62  
99.05  
MAG  
1.8019  
1.2279  
0.9600  
0.8236  
0.7599  
0.7426  
0.7529  
0.7648  
ANG  
58.43  
38.12  
19.07  
0.11  
-19.79  
-41.79  
-67.22  
-97.22  
MAG  
0.0288  
0.0303  
0.0327  
0.0364  
0.0420  
0.0496  
0.0595  
0.0701  
ANG  
-14.46  
-26.85  
-38.61  
-50.96  
-64.88  
-81.49  
-102.04  
-127.59  
MAG  
0.6268  
0.6531  
0.6737  
0.6847  
0.6839  
0.6699  
0.6430  
0.6085  
ANG  
174.83  
167.56  
158.81  
148.28  
135.52  
119.60  
98.92  
2
3
4
5
6
7
8
9
74.18  
42.52  
71.06  
OUTLINE DIMENSIONS (Unit: mm)  
Source  
Source  
Drain  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
Fax: 886-6-5051602  
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