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TC2591P1519 参数 Datasheet PDF下载

TC2591P1519图片预览
型号: TC2591P1519
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor]
分类和应用:
文件页数/大小: 3 页 / 70 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC2591P1519的Datasheet PDF文件第1页浏览型号TC2591P1519的Datasheet PDF文件第3页  
TC2591  
REV4_20070507  
RECOMMANDED OPERATING CONDITION  
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)  
Symbol  
VDS  
VGS  
IDS  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Rating  
Symbol  
Parameter  
Drain to Source Voltage  
Drain Current  
Rating  
12 V  
VDS  
8 V  
-5 V  
ID  
240 mA  
IDSS  
HANDLING PRECAUTIONS:  
Pin  
RF Input Power, CW  
Continuous Dissipation  
Channel Temperature  
Storage Temperature  
28 dBm  
3.8 W  
PT  
The user must operate in a clean, dry environment.  
Electrostatic Discharge (ESD) precautions should be  
observed at all stages of storage, handling, assembly, and  
testing. The static discharge must be less than 300V.  
TCH  
TSTG  
175 °C  
- 65 °C to +175 °C  
TYPICAL SCATTERING PARAMETERS (TA=25 °C)  
VDS = 8 V, IDS = 240 mA  
FREQUENCY  
S11  
S21  
S12  
S22  
(GHz)  
MAG  
0.9111  
0.8964  
0.8794  
0.8578  
0.8360  
0.8306  
0.8581  
0.9001  
ANG  
-167.09  
166.15  
141.85  
114.38  
79.47  
34.88  
-14.11  
-56.65  
MAG  
3.8048  
2.8222  
2.3866  
2.1913  
2.0878  
1.9288  
1.5922  
1.1456  
ANG  
68.95  
42.16  
MAG  
0.0337  
0.0378  
0.0429  
0.0497  
0.0575  
0.0627  
0.0600  
0.0493  
ANG  
-10.27  
-31.72  
-52.55  
-75.68  
-103.32  
-136.68  
-173.75  
150.84  
MAG  
0.4441  
0.4297  
0.3963  
0.3453  
0.2799  
0.2361  
0.3061  
0.4635  
ANG  
170.74  
157.73  
143.48  
124.99  
96.28  
45.65  
-16.20  
-58.84  
2
3
4
5
6
7
8
9
16.06  
-12.25  
-44.97  
-83.30  
-125.20  
-165.31  
OUTLINE DIMENSIONS (Unit: mm)  
Source  
Source  
Drain  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
Fax: 886-6-5051602  
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