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TC1801 参数 Datasheet PDF下载

TC1801图片预览
型号: TC1801
PDF下载: 下载PDF文件 查看货源
内容描述: 5W高线性和高效率砷化镓功率场效应管 [5W High Linearity and High Efficiency GaAs Power FETs]
分类和应用:
文件页数/大小: 3 页 / 109 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC1801的Datasheet PDF文件第2页浏览型号TC1801的Datasheet PDF文件第3页  
TC1801
REV5_20070502
5W High Linearity and High Efficiency GaAs Power FETs
FEATURES
!
5 W Typical Power at 6 GHz
!
Linear Power Gain: G
L
= 10 dB Typical at 6 GHz
!
High Linearity: IP3 = 47 dBm Typical at 6 GHz
!
Via Holes Source Ground
!
Suitable for High Reliability Application
!
Breakdown Voltage: BV
DGO
15 V
!
Lg = 0.35
µm,
Wg = 12 mm
!
High Power Added Efficiency: PAE
40 % for Class A Operation
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1801 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high
linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which
provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits
up to 20 GHz. All devices are 100 % DC tested to assure consistent quality.Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical applications include commercial and military high performance power amplifier.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
R
th
Conditions
Output Power at 1dB Gain Compression Point,
f
= 6 GHz V
DS
= 8 V, I
DS
= 1200 mA
Linear Power Gain,
f
= 6 GHz V
DS
= 8 V, I
DS
= 1200 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6GHz V
DS
= 8V, I
DS
=1200mA,*P
SCL
=23 dBm
Power Added Efficiency at 1dB Compression Power,
f
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 24 mA
15
MIN
36
9
TYP
36.5
10
47
40
3
2000
-1.7**
18
2
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
= 6 GHz
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 6 mA
Thermal Resistance
Note:
* P
SCL
: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1801’s are divided into 3 groups:
(1)
TC1801P1519
: Vp = -1.5V to -1.9V (2)
TC1801P1620
: Vp = -1.6V to -2.0V
(3)TC1801P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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