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TC1706 参数 Datasheet PDF下载

TC1706图片预览
型号: TC1706
PDF下载: 下载PDF文件 查看货源
内容描述: 3 W高线性和高效率砷化镓功率场效应管 [3 W High Linearity and High Efficiency GaAs Power FETs]
分类和应用:
文件页数/大小: 4 页 / 135 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
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TC1706
REV5_20070502
3 W High Linearity and High Efficiency GaAs Power FETs
FEATURES
!
3W Typical Power at 6 GHz
!
Linear Power Gain: G
L
= 11 dB Typical at 6 GHz
!
High Linearity: IP3 = 45 dBm Typical at 6 GHz
!
Via Hole Source Ground
!
Suitable for High Reliability Application
!
Breakdown Voltage: BV
DGO
18 V
!
Lg = 0.6
µm*,
Wg = 7.5 mm
PHOTO ENLARGEMENT
!
High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
DESCRIPTION
The TC1706 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and
high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low
thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage.
All devices are 100% DC tested to assure consistent quality.
Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical applications include commercial and military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
R
th
Conditions
Output Power at 1dB Gain Compression Point ,
f
= 6 GHz V
DS
= 8 V, I
DS
= 750 mA
Linear Power Gain ,
f
= 6 GHz V
DS
= 8 V, I
DS
= 750 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6 GHz V
DS
= 8V, I
DS
= 750mA,**P
SCL
= 21 dBm
Power Added Efficiency at 1dB Compression Power,
f
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 15 mA
18
MIN
34.5
10
TYP
35.5
11
45
43
1.8
1275
-1.7***
22
4
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
= 6 GHz
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 3.75 mA
Thermal Resistance
Note:
*
FET with 0.35
µ
m gate length is available for high frequency operation. Please contact factory for detail.
** P
SCL
: Output Power of Single Carrier Level.
***
For the tight control of the pinch-off voltage . TC1706’s are divided into 3 groups:
(1)
TC1706P1519
: Vp = -1.5V to -1.9V (2)
TC1706P1620
: Vp = -1.6V to -2.0V
(3)TC1706P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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