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TC1606 参数 Datasheet PDF下载

TC1606图片预览
型号: TC1606
PDF下载: 下载PDF文件 查看货源
内容描述: 2W高线性度和高效率砷化镓功率场效应管 [2W High Linearity and High Efficiency GaAs Power FETs]
分类和应用:
文件页数/大小: 4 页 / 150 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC1606的Datasheet PDF文件第1页浏览型号TC1606的Datasheet PDF文件第2页浏览型号TC1606的Datasheet PDF文件第3页  
TC1606  
REV5_20070502  
SMALL SIGNAL MODEL, VDS = 8 V, IDS = 500 mA  
SCHEMATI  
PARAMETERS  
0.0196 nH  
0.225 Ohm  
8.87 pF  
0.197 Ohm  
0.005 nH  
1.073 pF  
Lg  
Rg  
Cgs  
Ri  
Rs  
Ls  
Lg  
Cgd  
Ld  
Rd  
Rg  
Cgs  
Ri  
Gm  
Cds  
Cds  
Rds  
Rd  
Ld  
Rds  
0.455 Ohm  
0.361 pF  
880.6 mS  
3.9 psec  
31.85 Ohm  
0.315 Ohm  
0.004 nH  
T
Cgd  
Gm  
T
Rs  
Ls  
CHIP HANDLING  
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be  
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;  
Time: less than 1min.  
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil  
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:  
20 to 30 gms depending on size of wire and Bond Tip Temperature.  
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised  
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all  
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
4 / 4  
Fax: 886-6-5051602