TC1606N
REV4_20070502
2W High Linearity and High Efficiency GaAs Power FETs
FEATURES
!
2W Typical Power at 6 GHz
!
Linear Power Gain: G
L
= 8 dB Typical at 6 GHz
!
High Linearity: IP3 = 43 dBm Typical at 6 GHz
!
Non-Via Holes Source for Self-Bias Application
!
Suitable for High Reliability Application
!
Breakdown Voltage: BV
DGO
≥
18 V
!
Lg = 0.6
µm,
Wg = 5 mm
PHOTO ENLARGEMENT
!
High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
DESCRIPTION
The TC1606N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, which
has high linearity and high Power Added Efficiency. The device is processed without via-holes for self-bias
applications. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC
tested to assure consistent quality.
Bond pads are gold plated for either thermo-compression or thermo-sonic
wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include
commercial and military high performance power amplifier.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
R
th
Linear Power Gain,
f
Conditions
Output Power at 1dB Gain Compression Point,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
= 6 GHz
MIN
32.5
TYP
33
8
43
43
1.2
850
-1.7**
18
22
8
MAX
UNIT
dBm
dB
dBm
dB
A
mS
Volts
Volts
°C/W
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA,*P
SCL
= 20 dBm
Power Added Efficiency at 1dB Compression Power,
f
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 10 mA
Thermal Resistance
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 2.5 mA
Note:
* P
SCL
: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1606N’s are divided into 3 groups:
(1)
TC1606NP1519
: Vp = -1.5V to -1.9V (2)
TC1606NP1620
: Vp = -1.6V to -2.0V
(3)TC1606NP1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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