TC1501
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
VGS
IDS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12 V
-5 V
IDSS
Pin
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
28 dBm
3.8 W
PT
TCH
TSTG
175 °C
- 65 °C to +175 °C
CHIP DIMENSIONS
±
600 12
D
D
Units: Micrometers
Chip Thickness: 50
Gate Pad: 79 x 59.5
Drain Pad: 86.0 x 76.0
±
470 12
G
G
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
2 / 5
Fax: 886-6-5051602
TRANSCOM [ TRANSCOM, INC. ]
