TC1304V
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
VGS
IDS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
7.0 V
-3.0 V
IDSS
IGS
Gate Current
600 µA
Pin
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
24 dBm
PT
800 mW
175 °C
TCH
TSTG
- 65 °C to +175 °C
CHIP DIMENSIONS
320 ꢀ 12
Units: Micrometers
Chip Thickness: 50
D
G
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
340 ꢀ 12
S
S
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃ ± 5℃ ; Handling Tool :
Tweezers ; Time: less than 1min .
WIRE BONDING: The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. Stage Temperature: 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
2 / 2
Fax: 886-6-5051602
TRANSCOM [ TRANSCOM, INC. ]
