TC1301
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 50 mA
Symbol
VDS
VGS
IDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Rating
7.0 V
-3.0 V
IDSS
Frequency NFopt
GA
(dB)
19.7
16.6
14.3
12.7
11.7
10.9
10.4
9.8
Γopt
MAG
Rn/50
(GHz)
2
(dB)
0.36
0.48
0.59
0.70
0.78
0.85
0.98
1.12
1.27
ANG
15
0.88
0.74
0.62
0.55
0.50
0.49
0.50
0.51
0.54
0.28
0.18
0.15
0.12
0.09
0.06
0.04
0.04
0.07
4
39
6
64
IGS
Gate Current
600 µA
8
92
Pin
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
24 dBm
10
12
14
16
18
120
148
174
-162
-141
PT
800 mW
175 °C
TCH
TSTG
- 65 °C to +175 °C
9.0
CHIP DIMENSIONS
±
760 12
D
D
G
D
±
290 12
S
G
S
G
S
S
Chip Thickness: 100
Drain Pad: 80 x 70
Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
2 / 6
Fax: 886-6-5051602