TC1201V
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C) TYPICAL NOISE PARAMETERS (T
A
=25
°
C)
V
DS
= 4 V, I
DS
= 25 mA
Symbol
V
DS
V
GS
I
DS
I
GS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I
DSS
300
µ
A
21 dBm
400 mW
175
°C
- 65
°C
to +175
°C
Frequency
(GHz)
2
4
6
8
10
12
14
16
18
NF
opt
(dB)
0.36
0.38
0.40
0.43
0.50
0.56
0.66
0.83
1.03
G
A
(dB)
20.2
18.5
16.7
15.2
13.8
12.7
12.1
12.0
12.2
Γ
opt
MAG
0.96
0.83
0.67
0.51
0.37
0.28
0.25
0.31
0.49
ANG
14
31
51
76
108
147
-166
-108
-41
Rn/50
0.59
0.50
0.39
0.28
0.17
0.13
0.11
0.15
0.34
CHIP DIMENSIONS
430
!
12
Units: Micrometers
D
D
250
!
12
S
G
S
G
S
Chip Thickness: 55
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 65
CHIP HANDLING
DIE ATTACHMENT :
Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C
±5°C
; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING :
The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force :
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS :
The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/2
TRANSCOM [ TRANSCOM, INC. ]
