TS4/8GUSDHC6-P3
Bus Operating Conditions
•
General
Parameter
Peak voltage on all lines
All Inputs
Input Leakage Current
All Outputs
Output Leakage Current
-10
-10
4/8GB microSDHC Class 6 Card + Reader P3
Symbol
Min.
-0.3
Max.
V
DD
+0.3
10
10
Unit
V
µA
µA
Remark
•
Power Supply Voltage
Parameter
Supply voltage
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Power up time
Symbol
V
DD
V
OH
V
OL
V
IH
V
IL
Min.
2.7
0.75* V
DD
Max.
3.6
0.125* V
DD
Unit
V
V
V
V
V
ms
Remark
I
OH
=-100uA@V
DD
Min.
I
OL
=100uA@V
DD
Min.
0.625* V
DD
V
DD
+0.3
V
SS
-0.3
0.25* V
DD
250
From 0v to V
DD
Min.
•
Current Consumption
The current consumption is measured by averaging over 1 second.
Before first command: Maximum 15 mA
During initialization: Maximum 100 mA
Operation in Default Mode: Maximum 100 mA
Operation in High Speed Mode: Maximum 200 mA
Operation with other functions: Maximum 500 mA.
•
Bus Signal Line Load
The total capacitance C
L
the CLK line of the SD Memory Card bus is the sum of the bus master capacitance C
HOST
, the bus
capacitance C
BUS
itself and the capacitance C
CARD
of each card connected to this line:
C
L
= C
HOST
+ C
BUS
+
Ν*C
CARD
Where N is the number of connected cards.
3
Transcend Information Inc.
•
•
•
•
•
Parameter
Pull-up resistance
Bus signal line capacitance
Symbol
R
CMD
R
DAT
C
L
Min.
10
Max.
100
40
Unit
kΩ
pF
Remark
To prevent bus floating
1 card
C
HOST
+C
BUS
shall not exceed
30 pF