TS256M~2GUSD
Bus Operating Conditions
•
General
Parameter
Peak voltage on all lines
All Inputs
Input Leakage Current
All Outputs
Output Leakage Current
-10
10
µA
-10
10
µA
microSD Memory Card
Symbol
Min.
-0.3
Max.
VDD+0.3
Unit
V
Remark
•
Power Supply Voltage
Parameter
Supply voltage
Supply voltage specified in OCR register
Supply voltage differentials (V
SS1
, V
SS2
)
Power up time
-0.3
0.3
250
V
ms
From 0v to V
DD
Min.
Symbol
V
DD
Min.
2.0
Max.
3.6
Unit
V
Remark
CMD0, 15,55,ACMD41
commands
Except CMD0, 15,55,
ACMD41 commands
Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.
•
Bus Signal Line Load
The total capacitance C
L
the CLK line of the SD Memory Card bus is the sum of the bus master capacitance C
HOST
, the bus
capacitance C
BUS
itself and the capacitance C
CARD
of each card connected to this line:
C
L
= C
HOST
+ C
BUS
+
Ν*C
CARD
Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for
up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:
Parameter
Bus signal line capacitance
Single card capacitance
Maximum signal line inductance
Pull-up resistance inside card (pin1)
Symbol
C
L
C
CARD
R
DAT3
Min.
Max.
100
10
16
Unit
pF
pF
nH
KΩ
Remark
f
PP
≤
20 MHz, 7 cards
f
PP
≤
20 MHz
May be used for card
detection
10
90
Note that the total capacitance of CMD and DAT lines will be consist of C
HOST
, C
BUS
and one C
CARD
only since they are
connected separately to the SD Memory Card host.
Parameter
Pull-up resistance
Bus signal line capacitance
Symbol
R
CMD
, R
DAT
C
L
Min.
10
Max.
100
250
Unit
KΩ
pF
Remark
To prevent bus floating
f
PP
≤
5 MHz, 21 cards
Transcend Information Inc.
3
TRANSCEND [ TRANSCEND INFORMATION. INC. ]
