TS9002
ELECTRICAL CHARACTERISTICS – 3V OPERATION
V+ = 3V, V- = GND = 0V; T
A
= -40ºC to +85ºC, unless otherwise noted. Typical values are at T
A
= +25ºC. See Note 1.
PARAMETER
POWER REQUIREMENTS
Supply Current
COMPARATOR
Input Offset Voltage
Input Leakage Current (IN-, IN+)
Input Leakage Current (at HYST Pin)
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
Output Voltage Noise
Hysteresis Input Voltage Range
Response Time
(High-to-Low Transition)
Response Time
(Low-to-High Transition)
Output High Voltage
Output Low Voltage
REFERENCE
Reference Voltage
Reference Line Regulation
Source Current
Sink Current
2.5V ≤ (V+ - V-) ≤ 5V
ΔVREF
= 1%
ΔVREF
= 1%
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
1.173
1.164
20
6
10
4
1.182
0.25
25
15
1.191
1.199
V
mV/V
μA
μA
V- to (V+ – 1.3V)
V+ = 2.5V to 11V
100Hz to 100kHz
REF- 0.05V
Overdrive = 10 mV
T
A
= +25°C, 100pF load
Overdrive = 100 mV
Overdrive = 10 mV
T
A
= +25°C, 100pF Load
Overdrive = 100 mV
-40°C to +85°C; I
OUT
= 10mA
-40°C to +85°C; I
OUT
= 1.8mA
Dual Supply
-40°C to +85°C; I
OUT
= 1.8mA
17
7
17
7
V+ – 0.4
GND + 0.4
V- + 0.4
V
CM
= 1.5V
IN+ = IN- = 1.5V
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
V-
0.1
0.1
20
±3.5
±10
±2
±5
V+ – 1.3V
1
1
REF
mV
nA
nA
nA
nA
V
mV/V
mV/V
μV
RMS
V
μs
μs
V
V
V
CONDITIONS
IN+ = IN- + 100mV
HYST = REF
T
A
= +25°C
-40°C to +85°C
MIN
TYP
2
MAX
3.8
5.3
UNITS
µA
±0.01
±0.01
±0.02
±0.02
Output Voltage Noise
100Hz to 100kHz
100
μV
RMS
Note 1:
All specifications are 100% tested at T
A
= +25°C. Specification limits over temperature (T
A
= T
MIN
to T
MAX
) are guaranteed by device
characterization, not production tested.
Page 4
TS9002DS r1p0
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
