TS9002
ELECTRICAL CHARACTERISTICS – 3V OPERATION
V+ = 3V, V- = GND = 0V; TA = -40ºC to +85ºC, unless otherwise noted. Typical values are at TA = +25ºC. See Note 1.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
POWER REQUIREMENTS
TA = +25°C
-40°C to +85°C
2
3.8
5.3
Supply Current
IN+ = IN- + 100mV
HYST = REF
µA
COMPARATOR
Input Offset Voltage
TA = +25°C
-40°C to +85°C
TA = +25°C
-40°C to +85°C
TA = +25°C
-40°C to +85°C
±3.5
±10
±2
VCM = 1.5V
mV
±0.01
±0.01
±0.02
±0.02
nA
nA
nA
Input Leakage Current (IN-, IN+)
IN+ = IN- = 1.5V
±5
Input Leakage Current (at HYST Pin)
nA
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
Output Voltage Noise
V-
V+ – 1.3V
V
V- to (V+ – 1.3V)
V+ = 2.5V to 11V
100Hz to 100kHz
0.1
0.1
20
1
1
mV/V
mV/V
μVRMS
V
Hysteresis Input Voltage Range
REF- 0.05V
REF
Overdrive = 10 mV
Overdrive = 100 mV
Overdrive = 10 mV
Overdrive = 100 mV
17
7
17
7
Response Time
(High-to-Low Transition)
Response Time
TA = +25°C, 100pF load
TA = +25°C, 100pF Load
μs
μs
(Low-to-High Transition)
Output High Voltage
-40°C to +85°C; IOUT = 10mA
-40°C to +85°C; IOUT = 1.8mA
-40°C to +85°C; IOUT = 1.8mA
V+ – 0.4
V
V
V
GND + 0.4
V- + 0.4
Output Low Voltage
REFERENCE
Dual Supply
TA = +25°C
-40°C to +85°C
TA = +25°C
TA = +25°C
-40°C to +85°C
TA = +25°C
1.173
1.164
1.182
1.191
1.199
Reference Voltage
Reference Line Regulation
Source Current
V
2.5V ≤ (V+ - V-) ≤ 5V
ΔVREF = 1%
0.25
25
mV/V
μA
20
6
10
4
15
Sink Current
ΔVREF = 1%
μA
-40°C to +85°C
Output Voltage Noise
100Hz to 100kHz
100
μVRMS
Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device
characterization, not production tested.
Page 4
TS9002DS r1p0
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
