TS3310
ELECTRICAL CHARACTERISTICS
V
IN
=1.2V, V
OUT_ON
=V
IN
, VPROG is the programmed voltage according to S2, S1, S0 pins set for STORE voltage of 3V unless otherwise
specified. T
A
=-40°C to 85°C. Typical values are at T
A
=+25°C unless otherwise specified. Please see Note 1.
PARAMETER
Input Voltage Range
SYMBOL
V
IN
UVLO
Under Voltage Lock Out
Hysteresis
I
STORE
=50% of I
STORE(MAX)
,
0.9V<VIN<3.6V, at any
VPROG>VIN. TA=+25°C.
See Note 2.
0.97 x
VPROG
20
1.03 x
VPROG
mV
CONDITIONS
MIN
0.9
0.855
TYP
MAX
3.6
0.9
UNITS
V
V
STORE Voltage
V
STORE
VPROG
V
VPROG Tempco
@ IN. See Note 3.
No-Load Input Current,
I
Q
I-Floor
@ STORE. See Note 3.
Active-Mode
Boost Switch On-Time
NMOS
PMOS
LOAD
SWITCH
NMOS
PMOS
LOAD
SWITCH
T
ON
R
ON
NMOS
R
ON
PMOS
R
ON
LOAD
SWITCH
R
ON
NMOS
R
ON
PMOS
R
ON
LOAD
SWITCH
V
VGOOD
VSTORE GOOD
Hysteresis
V
OUT_ON L
V
OUT_ON H
S0L, S1L,
S2L
S0H, S1H,
S2H
Low CMOS Logic Level
High CMOS Logic Level
Low CMOS Logic Level
High CMOS Logic Level
0.6
0.6
% of target STORE voltage
V
STORE
=1.8V
@ IN. See Note 4.
V
IN
=1.8V
0.8 x 2/V
IN
0.027
90
30
150
2/V
IN
0.8
1.1
1.1
500
V
STORE
=3V
650
650
80
90
5
0.2
95
1.2 x 2/V
IN
1.3
1.65
1.65
180
% / °C
nA
µsec
Ω
On
Resistance
mΩ
%
V
OUT_ON
Input Voltage
V
S0, S1, S2
Input Voltage
0.2
V
S0, S1, S2, OUT_ON
Input Leakage Current
5
nA
Note 1:
All devices are 100% production tested at T
A
= +25°C and are guaranteed by characterization for T
A
= -40°C to +85°C, as specified.
Note 2:
I
STORE(MAX)
is provided as the Maximum Average STORE Current by the graph entitled “Expected Maximum STORE Output Current” in
the TS3310 Applications Section.
Note 3:
V
STORE
output is driven above regulation point. No switching is occurring.
Note 4:
V
STORE
=3V. L=100µH. C
STORE
≥1µF.
TS3310DS r1p1
Page 3
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
