TS3300
ELECTRICAL CHARACTERISTICS
V
BI
= 1.2V, V
BO
= 3V,
V
BEN
= LOW, I
BO
= 20mA, L = 10µH, C
BO
= 22µF unless otherwise noted. Values are at T
A
= 25°C unless otherwise noted.
See Note 1.
PARAMETER
Minimum Input Boost
Voltage
Maximum Input Boost
Voltage
Output Boost Voltage
Range
Current Measured at BO
Current Measured at BI
Current Measured at BO
Current Measured at BI
Efficiency
Boost Shutdown Supply
Current
Boost Feedback Voltage
during operation
Boost Feedback Pin
Current
Anti-Crush Feedback
Voltage
Anti-Crush Feedback
Voltage Hysteresis
Boost Enable Threshold
Boost Enable Hysteresis
Inductor Peak Current
Inductor Valley Current
N-channel ON Resistance
P-channel ON Resistance
SYMBOL
V
BI_MIN
V
BI_MAX
V
BO
I
BO
= 0mA,
V
BO FB
= 0.6V
T
A
=25°C
I
BO
= 0mA,
-40°C < T
A
< +85°C
V
BO FB
= 0.6V
V
BI
= 1.2V, V
BO
=1.8, I
BO
=30mA
Measured at BI.
V
BEN
= V
BI
V
BEN
= 0V
T
A
=25°C
Output voltage accuracy: ± 4%
0.489
CONDITIONS
BOOST REGULATOR
I
BO
= 0mA. T
A
=25ºC
Guaranteed by design
4.5
1.8
3.5
0.07
6
0.9
84
100
5.25
MIN
TYP
0.6
MAX
0.75
UNITS
V
V
V
µA
µA
µA
µA
%
nA
I
B_Q
Eff
I
SHUTDOWN
V
BO FB
I
BO FB
V
BI FB
V
BI FB_HYST
V
BEN
V
BEN_HYST
I
PK
I
V
Rds
N-CH
Rds
P-CH
0.505
±0.1
0.521
±1
0.425
V
nA
V
mV
V
BI
≥
0.6V
0.363
0.392
50
V
IL
V
IH
0.2
V
BI
-0.05
200
V
V
mV
mA
mA
No Load
365
10
0.27
0.48
TS3300DS r1p0
Page 3
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
