TS12011/TS12012
VDD = 0.8V, VSS = 0V, VCOMPIN+/- = 0V, VAMPIN+/- = 0V, VAMPOUT = (VDD + VSS)/2, VCOMPOUT = HiZ. TA = -40°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C. See note 1.
PARAMETER
SYMBOL
CONDITIONS
CONTROL PIN SECTION
MIN
TYP MAX UNITS
0.8V ≤ VDD ≤ 1.1V
1.1V < VDD ≤ 2.5V
0.8V ≤ VDD ≤ 1.1V
1.1V < VDD ≤ 2.5V
0.1
V
Comparator Latched Output
Enabled
VIL
VIH
ꢀꢁꢂꢃT Input Low Voltage
0.2
VDD - 0.1
1
Comparator Latched Output
Disabled
V
ꢀꢁꢂꢃT Input High Voltage
ꢀꢁꢂꢃT Input Leakage
VꢀꢁꢂꢃT = VSS; VꢀꢁꢂꢃT = 5.5V
100
nA
Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = TMIN to TMAX, as specified.
Note 2: VOS is defined as the center of the hysteresis band at the input.
Note 3: The hysteresis-related trip points are defined by the edges of the hysteresis band and measured with respect to the center of
the hysteresis band (i.e., VOS).
Note 4: The propagation delays are specified with an output load capacitance of CL = 15pF. VOVERDRIVE is defined above and is beyond the
offset voltage and hysteresis of the comparator input.
Page 4
TS12011_12DS r1p0
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
