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TS1102-200EG5T 参数 Datasheet PDF下载

TS1102-200EG5T图片预览
型号: TS1102-200EG5T
PDF下载: 下载PDF文件 查看货源
内容描述: 一个1μA , 200μVOS SOT23高精度电流检测放大器 [A 1μA, 200μVOS SOT23 Precision Current-Sense Amplifier]
分类和应用: 放大器
文件页数/大小: 11 页 / 787 K
品牌: TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
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TS1102  
PIN FUNCTIONS  
PIN  
SOT23  
LABEL  
FUNCTION  
5
4
1, 2  
3
RS+  
RS-  
GND  
OUT  
External Sense Resistor Power-Side Connection  
External Sense Resistor Load-Side Connection  
Ground. Connect these pins to analog ground.  
Output Voltage. VOUT is proportional to VSENSE = VRS+ - VRS-  
BLOCK DIAGRAM  
DESCRIPTION OF OPERATION  
The internal configuration of the TS1102 a  
unidirectional high-side, current-sense amplifier - is  
based on a commonly-used operational amplifier (op  
amp) circuit for measuring load currents (in one  
direction) in the presence of high-common-mode  
voltages. In the general case, a current-sense  
amplifier monitors the voltage caused by a load  
current through an external sense resistor and  
generates an output voltage as a function of that load  
current. Referring to the typical application circuit on  
Page 1, the inputs of the op-amp-based circuit are  
connected across an external RSENSE resistor that  
is used to measure load current. At the non-inverting  
input of the TS1102 (the RS+ terminal), the applied  
voltage is ILOAD x RSENSE. Since the RS- terminal is  
the non-inverting input of the internal op amp, op-amp  
feedback action forces the inverting input of the  
internal  
op  
amp  
to  
the  
same  
potential  
(ILOAD x RSENSE). Therefore, the voltage drop across  
RSENSE (VSENSE) and the voltage drop across RGAIN  
(at the RS+ terminal) are equal. To minimize any  
additional error because of op-amp input bias current  
mismatch, both RGAINs are the same value.  
Since the internal p-channel FET’s source is  
connected to the inverting input of the internal op  
amp and since the voltage drop across RGAIN is the  
same as the external VSENSE, op amp feedback action  
drives the gate of the FET such that the FET’s drain-  
source current is equal to:  
VSEꢃSE  
ꢁS  
RꢄAꢀꢃ  
TS1102DS r1p0  
Page 7  
RTFDS