TS1002/TS1004
ELECTRICAL CHARACTERISTICS
V
DD
= +0.8V, V
SS
= 0V, V
INCM
= V
SS
; R
L
= 100kΩ to (V
DD
-V
SS
)/2; T
A
= -40°C to +85°C, unless otherwise noted.
Typical values are at T
A
= +25°C. See Note 1
Parameters
Supply Voltage Range
Supply Current
Symbol
V
DD
-V
SS
I
SY
TS1004; R
L
= Open circuit
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage High
V
OS
TCV
OS
I
IN+
, I
IN-
I
OS
IVR
CMRR
PSRR
V
OH
V
IN+
, V
IN-
= (V
DD
- V
SS
)/2
T
A
= 25°C
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
Specified as I
IN+
- I
IN-
V
IN+
, V
IN-
= (V
DD
- V
SS
)/2
-40°C ≤ T
A
≤ 85°C
Guaranteed by Input Offset Voltage Test
0V ≤ V
IN(CM)
≤ 0.4V
0.65V ≤ (V
DD
- V
SS
) ≤ 2.5V
T
A
= 25°C
Specified as V
DD
- V
OUT
,
R
L
= 100kΩ to V
SS
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
Specified as V
DD
- V
OUT
,
R
L
= 10kΩ to V
SS
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
Specified as V
OUT
- V
SS
,
R
L
= 100kΩ to V
DD
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
Specified as V
OUT
- V
SS
,
R
L
= 10kΩ to V
DD
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
V
OUT
= V
SS
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
V
OUT
= V
DD
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
V
SS
+50mV ≤ V
OUT
≤ V
DD
-50mV
-40°C ≤ T
A
≤ 85°C
R
L
= 100kΩ to V
SS
, C
L
= 20pF
Unity-gain Crossover,
R
L
= 100kΩ to V
SS
, C
L
= 20pF
R
L
= 100kΩ to V
SS,
A
VCL
= +1V/V
FPBW = SR/(π • V
OUT,PP
); V
OUT,PP
= 0.7V
PP
f = 1kHz
f = 1kHz
V
IN
= V
SS
or V
DD
Conditions
TS1002; R
L
= Open circuit
T
A
= 25°C
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
-40°C ≤ T
A
≤ 85°C
T
A
= 25°C
-40°C ≤ T
A
≤ 85°C
Min
0.65
Typ
0.8
1.2
2.4
0.5
10
0.025
20
0.01
V
SS
50
50
2
V
DD
74
74
1.2
10
0.4
5
0.5
0.3
4.5
3
90
85
1.5
11
104
4
70
1.5
680
0.6
10
mA
Max
2.5
1.6
2
3.2
4
3
5
Units
V
µA
µA
mV
µV/°C
nA
nA
V
dB
dB
mV
Output Voltage Low
V
OL
2
2.5
16
20
0.6
1
7
10
mV
I
SC+
Short-circuit Current
I
SC-
Open-loop Voltage Gain
Gain-Bandwidth Product
Phase Margin
Slew Rate
Full-power Bandwidth
Input Voltage Noise Density
Input Current Noise Density
A
VOL
GBWP
φ
M
SR
FPBW
e
n
i
n
dB
kHz
degrees
V/ms
Hz
µV/
pA/
Note 1:
All specifications are 100% tested at T
A
= +25°C. Specification limits over temperature (T
A
= T
MIN
to T
MAX
) are guaranteed by
device characterization, not production tested.
TS1002_4DS r1p0
Page 3
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
