TPC8018-H
R
– Ta
I
– V
DS
DS (ON)
DR
10
8
1000
Common source
Common source
Pulse test
Ta = 25°C
Pulse test
100
10
1
I
= 18A
D
10
6
4
3
I
D
= 4.5A,9A
V
GS
= 4.5 V
4.5
I
D
= 4.5A,9A,18A
2
0
V
= 10 V
GS
1
V
= 0 V
GS
0.1
0
−80
−40
0
40
80
120
160
100
160
−0.2
−0.4
−0.6
−0.8
−1.0
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
2.5
2
10000
1000
100
C
iss
1.5
1
C
oss
C
rss
Common source
= 10 V
Common source
V
DS
V
= 0 V
GS
0.5
I
D
= 1 mA
f = 1 MHz
Ta = 25°C
Pulse test
10
0.1
0
−80
1
10
−40
0
40
80
120
160
Drain-source voltage
V
(V)
Ambient temperature Ta (°C)
DS
Dynamic input/output
characteristics
P
– Ta
D
2
1.6
1.2
0.8
0.4
0
50
40
30
20
10
0
20
(1)Device mounted on a
Common source
= 18 A
glass-epoxy board(a) (Note 2a)
(2)Device mounted on a
glass-epoxy board(b) (Note 2b)
ｔ＝10s
(1)
I
D
16
12
8
Ta = 25°C
Pulse test
V
= 6 V
DD
(2)
V
DS
12
24
4
V
GS
0
40
0
40
80
120
0
8
16
24
32
Total gate charge
Q
g
(nC)
Ambient temperature Ta (°C)
5
2006-11-16
TOSHIBA [ TOSHIBA ]
