TLP521−1,TLP521−2,TLP521−4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V = 0, f = 1 MHz
Min
1.0
—
—
55
7
—
—
—
Typ.
1.15
—
30
—
—
10
2
10
Max
1.3
10
—
—
—
100
50
—
Unit
V
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
Rank GB
IF = 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
Collector−emitter
saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
MIn
50
100
—
30
—
—
—
Typ.
—
—
60
—
—
0.2
—
Max
600
600
—
—
0.4
—
0.4
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
%
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
—
—
2500
—
—
Typ.
0.8
10
11
Max
—
—
—
—
—
Unit
pF
Ω
Vrms
Vdc
—
5000
5000
4
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
