TLP281,TLP281-4
Coupled Electrical Characteristics
(Ta = 25℃)
CHARACTERISTIC
Current Transfer Ratio
SYMBOL
I
C
/ I
F
TEST CONDITION
I
F
= 5 mA, V
CE
= 5 V
Rank GB
IF = 1 mA, VCE = 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
I
C (off)
V
F
= 0.7 V, V
CE
= 48 V
MIN.
50
100
—
30
—
—
—
—
TYP.
—
—
60
—
—
0.2
—
—
MAX.
600
600
—
—
0.4
—
0.4
10
μA
V
UNIT
%
Saturated CTR
I
C
/ I
F (sat)
%
Collector-Emitter
Saturation Voltage
Off-State Collector Current
Isolation Characteristics
(Ta = 25℃)
CHARACTERISTIC
Capacitance
(Input to Output)
Isolation Resistance
SYMBOL
C
S
R
S
TEST CONDITION
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.≤60%
AC , 1 minute
Isolation Voltage
BV
S
AC , 1 second,in OIL
DC , 1 minute, in OIL
MIN.
—
5×10
10
TYP.
0.8
10
14
MAX.
—
—
—
—
—
UNIT
pF
Ω
Vrms
Vdc
2500
—
—
—
5000
5000
Switching Characteristics
(Ta = 25℃)
CHARACTERISTIC
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
Turn-On Time
Storage Time
Turn-Off Time
SYMBOL
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ (Fig.1)
V
CC
= 5 V, I
F
= 16 mA
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
TEST CONDITION
MIN.
—
—
—
—
—
—
—
TYP.
2
3
3
3
2
25
40
MAX.
—
—
—
—
—
—
—
μs
μs
UNIT
(Fig.1)SWITCHING TIME TEST CIRCUIT
4
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
