TLP281,TLP281-4
Absolute Maximum Ratings
(Ta = 25°C)
CHARACTERISTIC
Forward Current
Forward Current Derating
LED
Pulse Forward Current (Note 1)
Reverse Voltage
Junction Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
DETECTOR
Collector Current
Collector Power Dissipation
(1 Circuit)
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
Isolation Voltage
(Note 2)
SYMBOL
I
F
∆I
F
/°C
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/°C
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/°C
BV
S
200
−2.0
150
−1.5
125
−55
to 100
−55
to 125
260 (10s)
170
−1.7
−0.7
(Ta≥53°C)
1
5
125
80
7
50
100
−1.0
RATING
TLP281
50
−0.5
(Ta≥25°C)
TLP281−4
UNIT
mA
mA /°C
A
V
°C
V
V
mA
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
2500(AC,1min,R.H.≤60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width
≤
100μs, frequency 100Hz
(Note 2) AC, 1 minute, R.H.≤60%,Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC
Forward Voltage
LED
Reverse Current
Capacitance
Collector-Emitter
Breakdown Voltage
Emitter-Collector
DETECTOR
Breakdown Voltage
SYMBOL
V
F
I
R
C
T
V
(BR) CEO
TEST CONDITION
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
MIN.
1.0
—
—
80
TYP.
1.15
—
30
—
MAX.
1.3
10
—
—
UNIT
V
μA
pF
V
V
(BR) ECO
I
E
= 0.1 mA
V
CE
= 48 V,
Ambient Light Below
(100
ℓx)
V
CE
= 48 V, Ta = 85°C
Ambient Light Below
(100
ℓx)
V = 0, f = 1 MHz
7
—
0.01
(2)
2
(4)
10
—
0.1
(10)
50
(50)
—
V
Collector Dark Current
(Note 3)
Capacitance
(Collector to Emitter)
I
CEO
(Note 4)
(Note 4)
—
—
—
μA
μA
pF
C
CE
(Note 3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
(Note 4)Irradiation to marking side using standard light bulb.
3
2010-08-27
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
