TLP181
I
F
– Ta
100
200
P
C
– Ta
Allowable forward current
I
F
(mA)
60
40
Allowable collector power
dissipation P
C
(mW)
80
160
120
80
20
40
0
−20
0
20
40
60
80
100
120
0
−20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
FP
– D
R
3000
Pulse width
≤
100μs
Ta = 25°C
100
I
F
– V
F
I
FP
(mA)
(mA)
I
F
Forward current
−
3
−
2
−
1
0
1000
500
300
10
Pulse forward current
1
100
50
30
0.1
10
3
0.01
85°C
0.001
0
25
°C
0.8
−25°C
10
3
10
3
10
3
10
Duty cycle ratio
D
R
0.4
1.2
1.6
2
Forward voltage
V
F
(V)
ΔV
F
/
ΔTa
– I
F
−3.2
1000
I
FP
– V
FP
I
FP
(mA)
Pulse forward current
500
300
Forward voltage temperature
coefficient
ΔV
F /
ΔTa
(mV / °C)
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1
100
50
30
10
5
3
1
0.6
Pulse width
≤
10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
0.3 0.5
1
3
5
10
30
50
1.0
1.4
1.8
2.2
2.6
3.0
Forward current
I
F
(mA)
Pulse forward
voltage
V
FP
(V)
6
2009-11-12
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
