TK40P04M1
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±0.1
10
µA
Drain cut-off current
VDS = 40 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
V(BR)DSX ID = 10 mA, VGS = -20 V
40
25
1.3
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 0.2 mA
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
2.3
13.4
11
Drain-source on-resistance
RDS(ON)
10.3
8.5
mΩ
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
rg
VDS = 10 V, VGS = 0 V, f = 1 MHz
1920
90
3.5
Reverse transfer capacitance
Output capacitance
310
1.6
20
Gate resistance
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Figure 6.2.1.
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
tr
ns
ton
tf
27
18
toff
63
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 32 V, VGS = 10 V, ID = 40 A
VDD ≈ 32 V, VGS = 5 V, ID = 40 A
VDD ≈ 32 V, VGS = 10 V, ID = 40 A
29
15
Gate-source charge 1
Gate-drain charge
Gate switch charge
Qgs1
Qgd
6.0
4.7
7.4
QSW
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse drain current (pulsed)
Diode forward voltage
(Note 3)
IDRP
120
-1.2
A
V
VDSF
IDR = 40 A, VGS = 0 V
Note 3: Ensure that the channel temperature does not exceed 150.
2011-10-21
Rev.1.0
3
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