SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
= Rated
DRM
MIN
TYP.
MAX
20
UNIT
µA
Repetitive Peak Off−State
I
V
V
―
―
DRM
Current
I
T2 (+), Gate (+)
―
―
―
―
―
―
―
―
―
―
―
―
―
0.2
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
1.5
1.5
1.5
―
II
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
= 12V
D
Gate Trigger Voltage
V
V
GT
R = 20Ω
L
III
IV
I
30
30
30
―
II
SM8GZ47
SM8JZ47
III
IV
I
Gate Trigger
Current
V = 12V
D
I
mA
GT
R = 20Ω
L
20
20
20
―
II
SM8GZ47A
SM8JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
V
V
I
= 12A
TM
1.5
―
V
V
TM
V
V
= Rated, Tc = 125°C
GD
D
D
I
= 12V, I
= 1A
50
3.6
mA
H
TM
Thermal Resistance
R
Junction to Case, AC
°C / W
th (j−c)
SM8GZ47
―
―
10
4
300
200
―
―
―
―
―
Critical Rate of
Rise of Off−State
Voltage
SM8JZ47
V
= Rated, T = 125°C
DRM
j
dv / dt
V / µs
V / µs
Exponential Rise
SM8GZ47A
SM8JZ47A
SM8GZ47
SM8JZ47
Critical Rate of
Rise of Off−State
Voltage at
V
= 400V, T = 125°C
j
DRM
(dv / dt) c
(di /dt) c = −4.5A / ms
SM8GZ47A
SM8JZ47A
―
Commutation
MARKING
* NUMBER
SYMBOL
MARK
* 1
* 2
* 3
TOSHIBA PRODUCT MARK
SM8GZ47, SM8GZ47A
M8GZ47
M8JZ47
A
TYPE
SM8JZ47, SM8JZ47A
SM8GZ47A, SM8JZ47A
Example
8A : January 1998
8B : Febrary 1998
8L : December 1998
* 4
2
2001-07-13
TOSHIBA [ TOSHIBA ]
