MG150J7KS50
Inverter Stage
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
DC
1ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
―
Rating
600
±20
150
300
150
300
320
150
−40
~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
Forward current
A
W
°C
°C
V
N·m
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector-emitter cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Forward voltage
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Reverse recovery time
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
V
F
t
r
t
on
t
f
t
off
trr
R
th (j-c)
R
th (c-f)
Transistor stage
Diode stage
Case to fin
(Note 2)
Test Condition
V
GE
= ±20V, V
CE
= 0
V
CE
= 600V, V
GE
= 0
V
CE
= 5V, I
C
= 15mA,
I
C
= 150A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0V,
f = 1MHz
I
F
= 150A
Inductive load
V
CC
= 300V
I
C
= 150A
V
GE
= ±15V
R
G
= 9.2Ω
(Note 1)
Min
―
―
5.0
―
―
―
―
―
―
―
―
―
―
―
Typ.
―
―
―
2.2
12.0
2.5
0.15
0.23
0.25
0.50
0.15
―
―
0.05
Max
±500
1.0
8.0
2.8
―
3.5
0.3
0.46
0.50
1.00
0.30
0.39
1.00
―
°C / W
µs
Unit
nA
mA
V
V
nF
V
Thermal resistance
Note 2: Silicone grease is applied.
2
2001-08-16
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
