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CMH05 参数 Datasheet PDF下载

CMH05图片预览
型号: CMH05
PDF下载: 下载PDF文件 查看货源
内容描述: [DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, 3-4E1A, 2 PIN, Signal Diode]
分类和应用: 光电二极管
文件页数/大小: 48 页 / 1079 K
品牌: TOSHIBA [ TOSHIBA ]
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4 . S ym b o ls a n d Te rm s  
Symbols  
Terms  
Definitions  
Maximum average current value at a half sine wave (conduction  
angle 180˚) of commercial power supply frequency (50 Hz / 60 Hz)  
that can flow in the diode under specified conditions  
Average Forward Current  
I
F (AV)  
Maximum average current value at the full sine wave (conduction  
angle 360˚) of commercial power supply frequency (50 Hz / 60 Hz)  
that can flow in the diode under specified conditions  
Average Output Current  
Io  
Peak Repetitive Reverse  
Voltage  
Instantaneous maximum allowable value of reverse voltage that  
can be applied repeatedly to the diode  
VRRM  
Non-repetitive maximum allowable peak current in one cycle of a  
50-Hz sine wave (conduction angle 180˚) that can flow in the  
forward direction of the diode at a specified junction temperature.  
This rating is only applied for an abnormal operation, which seldom  
occurs during devices lifespan.  
Non-Repetitive  
Peak Surge Current  
IFSM  
The maximum junction temperature at which the device's reliability  
and lifetime can be guaranteed.  
To enhance reliability of a device, please note that 80% derating for  
the Tj rating is recommended.  
Junction Temperature  
Storage Temperature  
Tj(max)  
The storage temperature Tstg refers to the ambient temperature  
range within which the device can be stored while not operating  
T
stg  
Maximum reverse-leakage current value when the specified reverse  
Peak Repetitive Reverse  
Current  
IRRM  
VFM  
trr  
voltage V  
is applied  
RRM  
Maximum value of voltage drop when the specified forward current  
flows  
Peak Forward Voltage  
Reverse Recovery Time  
Zener Voltage  
I
FM  
The time required for the current to reach a specified reverse current,  
after instantaneous switching from forward to reverse  
(See Figure 1 below.)  
Voltage value when the specified IZ current flows in reverse  
between the anode and cathode of a zener diode  
VZ  
Ratio of change in zener voltage to corresponding change in  
specified current IZ in zener area  
Zener Impedance  
rd  
Temperature Coefficient  
of Zener Voltage  
Ratio of change in zener voltage to corresponding change in  
junction temperature  
T
Maximum power dissipation under specified conditions  
Zener Power Dissipation  
P
9
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