2SK3878
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±30 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Drain-source breakdown voltage
Drain cutoff current
V
V
= 0 V
(BR) GSS
DS
= 720 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 0 V
900
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
1.3
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 4 A
1.0
7.0
2200
45
Ω
S
DS (ON)
⎪Y ⎪
D
= 15 V, I = 4 A
3.5
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
190
⎯
oss
Rise time
t
r
⎯
⎯
⎯
25
65
20
⎯
⎯
⎯
10 V
GS
0 V
I = 4 A
D
V
V
OUT
Turn-on time
t
on
R
= 100 Ω
L
Switching time
Fall time
ns
t
f
∼
V
400 V
DD
<
Duty 1%, t = 10 μs
w
Turn-off time
t
⎯
⎯
120
60
⎯
⎯
off
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
400 V, V
= 10 V, I = 9 A
nC
DD
GS
D
Gate-source charge
Q
⎯
⎯
34
26
⎯
⎯
gs
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
27
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 9 A, V
= 9 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
GS
t
= 0 V,
1.4
16
μs
μC
rr
dI /dt = 100 A/μs
Q
⎯
DR
rr
Marking
TOSHIBA
K3878
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13
TOSHIBA [ TOSHIBA ]
