2SC2712
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2712
Audio Frequency General Purpose Amplifier Applications
•
•
•
•
•
•
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
Excellent h
FE
linearity : h
FE
(I
C
= 0.1 mA)/ h
FE
(I
C
= 2 mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 70~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1162
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
