XP161A02A1PR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
9
5V
4.5V
4V
2.5V
Pulse Test, Ta=25:
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
9
Topr＝25 ℃
Pulse Test, Vds=10V
6
3.5V
3V
2V
Drain Current:Id (A)
Drain Current:Id (A)
6
-55 ℃
125 ℃
3
3
Vgs＝1.5V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.2
Pulse Test, Ta=25:
1
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25:
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.15
Drain-Source On-State Resistance
:Rds (on) (Ω)
Vgs＝2.5V
0.1
4.5V
0.1
Id＝1.5A
3A
0.05
0
0
2
4
6
8
10
0.01
0
3
6
9
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
11
Drain-Source On-State Resistance
:Rds (on) (Ω)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
0.3
Pulse Test
1
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=10V, Id=1mA
Gate-Source Cut-Off Voltage Variance
Vgs (off) Variance (V)
0.5
0.2
Id＝3A
1.5A
Vgs＝2.5V
0.1
0
1.5A,3A
4.5V
0
-60
-30
0
30
60
90
120
150
-0.5
-1
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (:)
Ambient Temp. Topr (:)
856
TOREX [ TOREX SEMICONDUCTOR ]
