■
XP152A01D8MR Characteristics
Drain/Source Voltage vs. Capacitance
1000
Vgs=0V, f=1MHz
1000
Switching Time vs. Drain Current
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%
tf
Capacitance:Ciss, Coss, Crss (pF)
Ciss
Coss
Switching Time:t (ns)
100
td
（off）
100
tr
10
td
（on）
Crss
10
0
-5
-10
-15
-20
1
-0.01
-0.1
-1
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
-10
Gate/Source Voltage:Vgs (V)
Vds=-10V, Id=-0.5A
Reverse Drain Current vs. Source/Drain Voltage
-1.5
Reverse Drain Current:Id (A)
Pulse Test, Ta=25:
-8
u
Vgs=-4.5V
-1
-2.5V
-6
-4
-0.5
0, 4.5V
-2
0
0
2
4
6
8
Gate Charge:Qg (nc)
0
0
-0.2
-0.4
-0.6
-0.8
-1
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
10
1
0.1
0.01
0.001
0.0001
0.0001
Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB)
Single Pulse
0.001
0.01
0.1
Pulse Width:PW (sec)
1
10
100
469
TOREX [ TOREX SEMICONDUCTOR ]
