XP151A13A0MR
■ELECTRICAL
CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *1
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
CONDITIONS
Vds= 20V, Vgs= 0V
Vgs=
±8V,
Vds= 0V
Id= 1mA, Vds= 10V
Id= 0.5A, Vgs= 4.5V
Id= 0.5A, Vgs= 2.5V
Id= 0.1A, Vgs= 1.5V
Forward Transfer Admittance *1
Body Drain Diode
Forward Voltage
| Yfs |
Vf
Id= 0.5A, Vds= 10V
If= 1A, Vgs= 0V
MIN.
-
-
0.5
-
-
-
-
-
TYP.
-
-
-
0.075
0.10
0.17
4.2
0.8
MAX.
10
±10
1.2
0.100
0.14
0.25
-
1.1
T
a = 25℃
UNITS
μA
μA
V
Ω
Ω
Ω
S
V
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds= 10V, Vgs=0V
f= 1MHz
CONDITIONS
MIN.
-
-
-
TYP.
220
120
45
MAX.
-
-
-
T
a = 25℃
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs= 5V, Id= 0.5A
Vdd= 10V
CONDITIONS
MIN.
-
-
-
-
TYP.
10
15
75
65
MAX.
-
-
-
-
T
a = 25℃
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN.
-
TYP.
250
MAX.
-
UNITS
℃/W
2/5
TOREX [ TOREX SEMICONDUCTOR ]
