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XP151A02BOMR 参数 Datasheet PDF下载

XP151A02BOMR图片预览
型号: XP151A02BOMR
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOS FET的低导通电阻和超高速开关特性。 [N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.]
分类和应用: 开关
文件页数/大小: 4 页 / 56 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
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XP151A02B0MR
Power MOS FET
x
N-Channel Power MOS FET
x
DMOS Structure
x
Low On-State Resistance: 0.2Ω MAX
x
Ultra High-Speed Switching
x
SOT-23 Package
s
Applications
q
Notebook PCs
q
Cellular and portable phones
q
On-board power supplies
q
Li-ion battery systems
s
General Description
The XP151A02B0MR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
s
Features
Low on-state resistance:
Rds(on)=0.2Ω(Vgs=4.5V)
Rds(on)=0.32Ω(Vgs=2.5V)
Ultra high-speed switching
Operational Voltage:
2.5V
High density mounting:
SOT-23
u
s
Pin Configuration
D
3
s
Pin Assignment
PIN
NUMBER
1
2
3
PIN
NAME
G
S
D
FUNCTION
Gate
Source
Drain
1
G
2
S
SOT-23
(TOP VIEW)
s
Equivalent Circuit
3
s
Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
±12
0.8
2.5
0.8
0.5
150
-55~150
Ta=25:
UNITS
V
V
A
A
A
W
:
:
1
2
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
N-Channel MOS FET
(1 device built-in)
Note: When implemented on a glass epoxy PCB
446