XP134A11A1SR
Power MOSFET
ETR1114_001
■GENERAL
DESCRIPTION
The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
:Rds(on)=0.065Ω(Vgs=-10V)
:Rds(on)=0.11Ω(Vgs=-4.5V)
Ultra High-Speed Switching
Driving Voltage
DMOS Structure
Two FET Devices Built-in
Package
: SOP-8
: -4.5V
P-Channel Power MOSFET
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTION
1
2
3
4
5~6
7~8
S1
G1
S2
G2
D2
D1
Source
Gate
Source
Gate
Drain
Drain
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
T
a = 25℃
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-30
±20
-4
-16
-4
2
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a glass epoxy PCB
1/5
TOREX [ TOREX SEMICONDUCTOR ]
